MANUFACTURE OF SEMICONDUCTOR DEVICE

Title:

MANUFACTURE OF SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JPH0563100

Kind Code:

A

Abstract:

PURPOSE: To obtain an annealing method which has small residual organic component and in which no crack occurs in the formation of an interlayer insulating film as an SiO2 by annealing Si organic compound.

CONSTITUTION: A method for manufacturing a semiconductor device has the steps of annealing to separate at least partial organic component of an organic compound film of silicon deposited on a substrate in such a manner that the organic compound film is formed of an interlayer insulating film made of silicon oxide. The annealing is conducted in a temperature range of a critical temperature or higher for vigorously starting to oxidize the compound film in an oxygen atmosphere to 450°C in an atmosphere of a pressure of the normal pressure to 1mTorr in which 20% or less of oxygen is mixed with nitrogen.

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Inventors:

MIZUSHIMA MASAKO
HATANAKA MASANOBU

Application Number:

JP21910691A

Publication Date:

March 12, 1993

Filing Date:

August 30, 1991

Export Citation:

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Assignee:

FUJITSU LTD
FUJITSU VLSI LTD

International Classes:

H01L21/316; H01L21/324; H01L21/768; (IPC1-7): H01L21/316; H01L21/324; H01L21/90

Attorney, Agent or Firm:

Teiichi

Next Patent: SEMICONDUCTOR PACKAGE