Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH0567623
Kind Code:
A
Abstract:
PURPOSE: To suppress the irregularity of the diffusion layer of a semiconductor device, and to univocally determine DC characteristics.
CONSTITUTION: After a silicon oxide film 3 has been formed on an N-type silicon substrate 1, a P-type base layer 2 is formed. An aperture 4 is perforated, and a polysilicon film 5 is formed. Using photoresists 9 and 10, arsenic ions are implanted into the aperture part where an emitter region 7 will be formed, boron ions are implanted into the aperture part 6 where a base-contact region will be formed, and then the ions are diffused by conducting a heat treatment.
Inventors:
TSUDA HIROSHI
Application Number:
JP22672291A
Publication Date:
March 19, 1993
Filing Date:
September 06, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L29/73; H01L21/331; H01L29/732; (IPC1-7): H01L21/331; H01L29/73
Attorney, Agent or Firm:
Uchihara Shin
Next Patent: PREPARATION OF POROUS FILTER LAYER