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Patent Searching and Data


Title:
FORMING METHOD OF PATTERN
Document Type and Number:
Japanese Patent JPH0590149
Kind Code:
A
Abstract:

PURPOSE: To increase a non-intensity difference between an exposed part and a nonexposed part even when a focusing value is varied to be exposed and to accurately form a pattern on a base to be processed with a step by forming an optical contrast increasing film having high transmittance against a strong light and low transmittance against a weak light on a resist film.

CONSTITUTION: A semiconductor substrate 11 having a step is coated with a photosensitive resin material exhibiting photosensitive characteristics for an i beam to form a resist film 12. Then, an aqueous soluble diazo series CEL film 13 is formed on the film 12. Thereafter, the film 12 is exposed in a desired pattern, irradiated with the i beam 15 through a mask 14. Then, the material is developed with developer. Thus, a focus margin can be increased by exposing the substrate provided with the CEL film on the resin material by using a projection exposure unit having a coherence factor σ value of 0.72 or more, and an accurate resist pattern can be formed on a base to be processed with a step.


Inventors:
ITO SHINICHI
Application Number:
JP27876091A
Publication Date:
April 09, 1993
Filing Date:
September 30, 1991
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
G03F7/207; G03F7/20; G03F7/26; H01L21/027; H01L21/30; (IPC1-7): G03F7/207; G03F7/26; H01L21/027
Attorney, Agent or Firm:
Takehiko Suzue