Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH065845
Kind Code:
A
Abstract:
PURPOSE: To obtain a gate structure which has a gate trigger function of a high switching power strength capable of surely turning on without breaking even on a low gate input and is most suitable to a thyristor with a large capacitance.
CONSTITUTION: A semiconductor device has a cathode structure in which an object rotates two cycles around the center axis of a cathode face in a plane of the cathode face. An auxiliary n emitter layer 11 having a semicircular ring structure in which the auxiliary n emitter layer 11 is cut with an auxiliary gate electrode part 112 in which a gate electrode 12 is opposite to an auxiliary gate electrode 14 is provided.
Inventors:
SUZUKI SATORU
NONOYAMA SHIGEHARU
AKABANE KATSUMI
NONOYAMA SHIGEHARU
AKABANE KATSUMI
Application Number:
JP16573292A
Publication Date:
January 14, 1994
Filing Date:
June 24, 1992
Export Citation:
Assignee:
HITACHI LTD
HITACHI HARAMACHI SEMI CONDUCT
HITACHI HARAMACHI SEMI CONDUCT
International Classes:
H01L29/74; (IPC1-7): H01L29/74
Attorney, Agent or Firm:
Ogawa Katsuo