PURPOSE: To control the Si concentration in the GaP single crystal layer in the liquid-phase epitaxial growth technique.
CONSTITUTION: When the liquid-phase epitaxial growth of Si-doped GaP single crystal layer is repeated several times batchwise, the Si-concentration is determined in the GaP liquid-phase growth layer formed in the preceding batch to know the amount of Si to be added to the Ga solution used in the preceding batch for using in the next batch. Then, the amount of Si is added to the used solution to start the epitaxial growth of the following (present) batch. Si concentration in the GaP epitaxial growth layer is determined by emitting a laser beam to the GaP liquid-phase growth layer at room temperature and measuring the O/G ratio (the ratio of the luminescent intensity near 6300 angstroms to that near 5540 angstroms) in the spectrum of the light radiated from the liquid- phase layer.
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TAMURA YUKI
KOKUBU NORIHIDE
