NANOSTRUCTURED SILICON CARBIDE SINTERED COMPACT AND ITS PRODUCTION METHOD

Title:

NANOSTRUCTURED SILICON CARBIDE SINTERED COMPACT AND ITS PRODUCTION METHOD

Document Type and Number:

Japanese Patent JP2004035327

Kind Code:

A

Abstract:

To provide a nanostructured SiC sintered compact and a novel method for producing such a sintered compact.

This production method for the nanostructured SiC sintered compact comprises the processes for: obtaining a powder comprising SiC particles having a mean particle size of 50 nm or less and inevitable impurities, charging a desired amount of the above powder in a desired sintering mold, and sintering the charged powder by a pulse-electrification pressure sintering method. The sintering process is carried out by elevating the temperature to a sintering temperature within the range of 1,600-2,000°C at an elevating speed within the range of 100-300°C/min under a sintering pressure ranged from 10 MPa to 100 MPa. The obtained nanostructured SiC sintered compact has a relative density of 60-99%.

Inventors:

TOKITA MASAO
OYANAGI MITSUYUKI
TSURUSAKI CHIKA
KAWAHARA MASAKAZU
YAMAMOTO TAKESHI
SHIRAI KENSHIRO

Application Number:

JP2002194890A

Publication Date:

February 05, 2004

Filing Date:

July 03, 2002

Export Citation:

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Assignee:

SUMITOMO COAL MINING
OYANAGI MITSUYUKI
BITS KK

International Classes:

B82B1/00; B82B3/00; C04B35/565; C04B35/626; C04B35/64; (IPC1-7): C04B35/565; B82B1/00; B82B3/00; C04B35/626; C04B35/64

Attorney, Agent or Firm:

Kazuo Shamoto
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Hiroyuki Uchida

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