Title:
窒化物半導体装置の製造方法及び窒化物半導体装置
Document Type and Number:
Japanese Patent JP7404703
Kind Code:
B2
Abstract:
A method for manufacturing a nitride semiconductor device includes: selectively ion-implanting an element that is other than p-type impurities and n-type impurities into a first region in a first primary surface of a gallium nitride layer so as to generate crystal defects in the first region; selectively ion-implanting a p-type impurity into a second region in the gallium nitride layer, the second region being shallower than the first region in a depth direction and being within the first region in a plan view; and thermally treating said gallium nitride layer that has been ion-implanted with said element and said p-type impurity so as to thermally diffuse said p-type impurity in the second region into a third region that is within the first region and that surrounds a bottom and sides of the second region.
Inventors:
Shinya Takashima
Ryo Tanaka
Katsunori Ueno
Ryo Tanaka
Katsunori Ueno
Application Number:
JP2019147387A
Publication Date:
December 26, 2023
Filing Date:
August 09, 2019
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L21/336; H01L21/265; H01L29/06; H01L29/12; H01L29/41; H01L29/78
Domestic Patent References:
| JP2019106456A | ||||
| JP2017168557A | ||||
| JP2002176004A | ||||
| JP2004356257A | ||||
| JP2003124515A | ||||
| JP2018182279A |
Foreign References:
| WO2019098271A1 | ||||
| WO2018151227A1 |
Attorney, Agent or Firm:
Hajime Hirose
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