Title:
NITRIDE SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2010129566
Kind Code:
A
Abstract:
To provide a nitride semiconductor device for inhibiting an increase in a leakage current via a buffer layer to prevent degradation of characteristics.
The nitride semiconductor device has an insulator region 8A in an AlGaN layer 4. Thus, even if strain occurs in the buffer layer 2 due to heat, shock or the like to cause current to easily flow to the buffer layer 2, the insulator region 8A prevents the current from flowing as indicated by the dotted arrow (a) in Fig.1. Thus, the increase in the leakage current via the buffer layer 2 can be inhibited to prevent degradation in the characteristics.
COPYRIGHT: (C)2010,JPO&INPIT
Inventors:
YAMASHITA MASAHARU
Application Number:
JP2008299167A
Publication Date:
June 10, 2010
Filing Date:
November 25, 2008
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2008159842A | 2008-07-10 | |||
| JP2007273597A | 2007-10-18 |
Attorney, Agent or Firm:
Hiroshi Yamazaki
Mitsuo Tanaka
Yukinori Nakakura
Mitsuo Tanaka
Yukinori Nakakura
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