Title:
窒化物半導体装置および窒化物半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7187808
Kind Code:
B2
Abstract:
To provide a nitride semiconductor device having a guard ring portion.SOLUTION: A nitride semiconductor device includes a nitride semiconductor layer, a P-type guard ring portion epitaxially grown on the nitride semiconductor layer, and an I-type or N-type ion implantation region adjacent to the guard ring portion on the nitride semiconductor layer. A manufacturing method of a nitride semiconductor device includes a step of providing a nitride semiconductor layer, a step of epitaxially growing a P-type epitaxial layer on the nitride semiconductor layer, and a step of providing the P-type guard ring portion and the I-type or N-type ion implantation region adjacent to the guard ring portion in the epitaxial layer.SELECTED DRAWING: Figure 1A
Inventors:
Ryo Tanaka
Shinya Takashima
Hideaki Matsuyama
Ueno Katsunori
Masaharu Edo
Shinya Takashima
Hideaki Matsuyama
Ueno Katsunori
Masaharu Edo
Application Number:
JP2018076965A
Publication Date:
December 13, 2022
Filing Date:
April 12, 2018
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
H01L29/06; H01L21/329; H01L21/336; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JP6281653B1 | ||||
| JP2008147576A | ||||
| JP2017135174A |
Attorney, Agent or Firm:
Patent Attorney Corporation RYUKA International Patent Office
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