Title:
窒化物半導体装置
Document Type and Number:
Japanese Patent JP5343100
Kind Code:
B2
Abstract:
According to one embodiment, a nitride semiconductor device includes a semiconductor layer, a source electrode, a drain electrode, a first and a second gate electrode. The semiconductor layer includes a nitride semiconductor. The source electrode provided on a major surface of the layer forms ohmic contact with the layer. The drain electrode provided on the major surface forms ohmic contact with the layer and is separated from the source electrode. The first gate electrode is provided on the major surface between the source and drain electrodes. The second gate electrode is provided on the major surface between the source and first gate electrodes. When a potential difference between the source and first gate electrodes is 0 volts, a portion of the layer under the first gate electrode is conductive. The first gate electrode is configured to switch a constant current according to a voltage applied to the second gate electrode.
More Like This:
Inventors:
Kuraguchi Masahiko
Application Number:
JP2011059547A
Publication Date:
November 13, 2013
Filing Date:
March 17, 2011
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/337; H01L21/28; H01L21/336; H01L21/338; H01L21/8232; H01L27/06; H01L29/417; H01L29/423; H01L29/47; H01L29/49; H01L29/778; H01L29/78; H01L29/808; H01L29/812; H01L29/872
Domestic Patent References:
| JP2009530862A | ||||
| JP2007150282A | ||||
| JP2008016682A | ||||
| JP11026776A | ||||
| JP2007035898A | ||||
| JP2010245550A | ||||
| JP63202075A | ||||
| JP2010225962A | ||||
| JP2009059816A | ||||
| JP2011044647A | ||||
| JP2012044078A |
Attorney, Agent or Firm:
Masahiko Hinataji