Title:
窒化物半導体基板の製造方法および窒化物半導体基板
Document Type and Number:
Japanese Patent JP6763347
Kind Code:
B2
Abstract:
To provide a method for manufacturing a nitride semiconductor substrate, capable of improving the crystallinity of a group III nitride semiconductor layer.SOLUTION: A method for manufacturing a nitride semiconductor substrate 100 comprises: the first step of forming a diamond layer 12 on a silicon wafer 10; the second step of thinning a silicon wafer 10, the third step of carbonizing a silicon portion left by the thinning to form a single crystal SiC layer 14; and the fourth step of forming a group III nitride semiconductor layer, such as a GaN layer 16 on the surface of the single crystal SiC layer 14 on the side on which the diamond layer 12 is not formed.SELECTED DRAWING: Figure 1
Inventors:
Yoshiyasu Koga
Application Number:
JP2017112981A
Publication Date:
September 30, 2020
Filing Date:
June 07, 2017
Export Citation:
Assignee:
Sumco inc.
International Classes:
C30B29/38; C23C16/02; C23C16/34; C30B25/18; H01L21/205
Domestic Patent References:
| JP5109625A | ||||
| JP9181355A | ||||
| JP2002261011A | ||||
| JP2016111138A | ||||
| JP2011519181A | ||||
| JP2009167053A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Keisuke Kawahara
Miyata Kousuke
Mitsutsugu Sugimura
Keisuke Kawahara
Miyata Kousuke