Title:
ＳｉＮＷアレイ上垂直配向型ＣＮＴの無触媒合成
Document Type and Number:
Japanese Patent JP5872672
Kind Code:
B2
Abstract:
The present invention discloses novel one dimensional, direct nano-heterojunctions of vertically aligned silicon nanowires (SiNW)-carbon nano tube (CNT) arrays with ultra-low turn-on field useful in single electronic devices. The invention further discloses catalyst free chemical vapor deposition (CVD) route for synthesis of one dimensional, direct nano-heterojunctions of vertically aligned SiNW-CNT arrays.
Inventors:
Sherk, manjusha, villas
Application Number:
JP2014501800A
Publication Date:
March 01, 2016
Filing Date:
March 30, 2012
Export Citation:
Assignee:
Council of Scientific and Industrial Research
International Classes:
C01B31/02; B82Y30/00; B82Y40/00; C01B33/02
Domestic Patent References:
| JP2002141633A | ||||
| JP2010171431A | ||||
| JP2010192367A |
Attorney, Agent or Firm:
Ikeuchi, Sato & Partners