PURPOSE: To provide a non-single crystal silicon semiconductor film wherein doping efficiency is excellent, impurities are hard to diffuse, and electrons are easy to move, by making the average radius and concentration of microvoids existing in the semiconductor film lower than or equal to 3.5 and 1×1019(cm-3), respectively.
CONSTITUTION: For example, in the case of light acceptor for electrophotography, acceptor 104 for electrophotography is constituted by laminating a charge injection preventive layer 102 and a photoconductive layer 103 on a retainer 101. Microcrystal silicon semiconductor and polycrystalline silicon semiconductor out of non-single crystal silicon semiconductor are especially suitable to the charge injection preventive layer 102. Amorphous silicon semiconductor out of non-single crystal silicon semiconductor is especially suitable to the photoconductive layer 103. The average radius of microvoids contained in the semiconductor is made smaller than or equal to 3.5, and the density of the microvoids is made lower than or equal to 1×1019(cm-3). Thereby the flatness of the interface and the surface is improved, the stress of the interface is reduced, and the doping efficiency of impurities is improved.
KARIYA TOSHIMITSU
AOIKE TATSUYUKI
KODA YUZO
NIWA MITSUYUKI
