To provide a non-volatile memory reading method for preventing a read disturbance phenomenon.

The method comprises: a step for discharging bit lines to a low voltage level, a step for applying a reading voltage or pass voltage to word lines connected to memory cells, a step for pre-charging the bit line connected to a specific memory cell to be read to a high voltage, and a step for evaluating the voltage level of the bit line and detecting data stored in the specific cell depending on the voltage level of the evaluated bit line. Therefore, a hot carrier injection phenomenon can be prevented from occurring around the memory cell to be read so that threshold voltages of the surrounding memory cells is changed and read disturbance is prevented.