Title:
不揮発性高分子双安定性記憶素子
Document Type and Number:
Japanese Patent JP2008530779
Kind Code:
A
Abstract:
The present invention relates to non-volatile memory device utilizing multi-layered self-assembled Ni1-xFex nanocrystalline arrays embedded in a polymer thin film without source and drain regions and the fabrication method thereof. It is possible to fabricate nano-crystallines more simply than hitherto method according to the present invention. More particularly, it is possible to control size and density of nano-crystallines without agglomeration of the crystallines since the crystallines, which have uniform distribution, are besieged to polymer layer. Furthermore, the present invention provides the non-volatile bistable memory device having chemical and electrical stability of higher efficiency and lower cost than conventional flash memory devices with a nano floating gate. Also, source and drain region is unnecessary in the device of the present invention, it can reduce the throughput time and cost.
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Inventors:
Tae Hwan Kim
Yong-Hoo Kim
Jae Ho Kim
Jae Hoon Jun
Yong-Bae Yeon
Sun-Kung Lim
Yong-Hoo Kim
Jae Ho Kim
Jae Hoon Jun
Yong-Bae Yeon
Sun-Kung Lim
Application Number:
JP2007554000A
Publication Date:
August 07, 2008
Filing Date:
September 26, 2005
Export Citation:
Assignee:
Samsung Mobile Display Co., Ltd.
Samsung Electronics Company Limited
Samsung Electronics Company Limited
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro