Title:
NONVOLATILE ELECTRONIC MEMORY DEVICE
Document Type and Number:
Japanese Patent JPH05326972
Kind Code:
A
Abstract:
PURPOSE: To provide a nonvolatile electronic memory device easy to integrate highly and manufacture.
CONSTITUTION: A nonvolatile electronic memory device having a floating gate type MOS transistor structure comprises a read gate 10 made of a high conductive metal opposite to the top and side surfaces of a floating gate 5 through an insulating film and a write/erase gate 15 made of the high conductive metal opposite to at least one part of the top and side surfaces of the floating gate 5 through a thin insulating film through which a tunnel current flows.
Inventors:
TAKAKURA NOBUYUKI
Application Number:
JP12394792A
Publication Date:
December 10, 1993
Filing Date:
May 15, 1992
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
G11C17/00; G11C16/02; G11C16/04; H01L21/8247; H01L29/788; H01L29/792; (IPC1-7): H01L29/788; G11C16/02; G11C16/04; H01L29/792
Domestic Patent References:
| JPH04103176A | 1992-04-06 | |||
| JPS61245577A | 1986-10-31 | |||
| JPH04101463A | 1992-04-02 | |||
| JPH0231466A | 1990-02-01 |
Attorney, Agent or Firm:
Takehiko Matsumoto