PURPOSE: To increase a nonvolatile memory area without increasing greatly the chip area of an integrated circuit by connecting at least two nonvolatile memory elements or above through a selecting switch to one CMOS static RAM.

CONSTITUTION: Two EEPROMs or above are connected to one SRAM through a switch controlled by a selecting circuit and the exchange of the data between the SRAM and the EEPROM is executed between selected memory cells. For example, a switch 3 is connected to the contact (q) of an SRAM 1, plural EEPROMs 2 are connected through the switch 3 and for the switch 3, conducting and nonconducting are controlled by a selecting circuit 4. Usually, the switch 3 comes to be all nonconducting, and the writing and reading to the SRAM 1 can be freely executed. When the information of the SRAM 1 is made nonvolatile, first, an optional switch 3 comes to be the conducting condition by the selecting circuit 4 and from an EEPROM writing and reading signal generating circuit 5, the writing signal is supplied only to the selected EEPROM.