To provide a nonvolatile semiconductor memory device capable easily specifying a region in which a failure has occurred in stacking semiconductor devices, and improving a data writing reliability, and to provide a control method of the nonvolatile semiconductor memory device.

A plurality of electrically rewritable memory elements formed at cross points of a semiconductor layer and a conductive layer, include a plurality of conductor layers alternately laminated on a substrate and a plurality of insulating layers. In the laminated layers, at least of one layer of a plurality of conductive layers or a plurality of insulating layers is different from other conductive layers or insulating layers in physical properties. A semiconductor layer is formed on a surface of a conductive layer and an insulating layer exposed by a plurality of memory plug holes extending from an upper face of the laminated layers to the substrate layer. Each of a plurality of memory elements includes a control electrode, and each of the control electrodes includes a memory string having a plurality of memory elements connected to a plurality of conductive layers.