Title:
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2009009692
Kind Code:
A
Abstract:
To provide a nonvolatile semiconductor memory device for repeating program operation without an additional data buffer, and to provide a method for programming the memory.
The programming method performs a first programming operation with respect to a memory cell, recovers original data by performing a recovery read operation after completing the first programming operation, and uses a verification read voltage that is higher than that used during the first programming operation to perform a second programming operation with respect to the memory cell.
Inventors:
CHUN JIN-YOUNG
JEONG JAE-YONG
YOON CHI-WEON
JEONG JAE-YONG
YOON CHI-WEON
Application Number:
JP2008169270A
Publication Date:
January 15, 2009
Filing Date:
June 27, 2008
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
G11C16/02; G06K19/07; G11C16/04; G11C16/06
Domestic Patent References:
| JP2003109386A | 2003-04-11 |
Foreign References:
| WO2006107796A2 | 2006-10-12 | |||
| WO2005073975A2 | 2005-08-11 | |||
| WO2005073977A2 | 2005-08-11 | |||
| WO2005073980A1 | 2005-08-11 |
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro