Title:
NONVOLATILE SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2021044315
Kind Code:
A
Abstract:
To provide a highly-reliable nonvolatile semiconductor storage device capable of suppressing a leak current of a semiconductor substrate.SOLUTION: A nonvolatile semiconductor storage device 20 comprises: a semiconductor substrate 30 having a first conductivity type and including a crushed layer 30R on a rear surface; a memory cell array 21 arranged on a surface facing the crushed layer of the semiconductor substrate; and a high-voltage transistor HVP of the first conductivity type arranged on the semiconductor substrate, including a channel of the first conductivity type, and supplying a high voltage to the memory cell array. The high-voltage transistor of the first conductivity type comprises a well region NW arranged on a surface of the semiconductor substrate and having a second conductivity type, which is an opposite conductivity type of the first conductivity type, a p+ source region and a p+ drain region arranged in the well region, and a first high concentration layer WT2 of the first conductivity type arranged between the crushed layer and the well region of the semiconductor substrate and having higher concentration than impurity concentration of the semiconductor substrate.SELECTED DRAWING: Figure 15
Inventors:
WATANABE SHOICHI
NOGUCHI MITSUHIRO
NOGUCHI MITSUHIRO
Application Number:
JP2019163798A
Publication Date:
March 18, 2021
Filing Date:
September 09, 2019
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11573; G11C16/08; H01L21/336; H01L21/822; H01L21/8238; H01L27/04; H01L27/092; H01L27/11582; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Hidekazu Miyoshi
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu
Shunichi Takahashi
Masakazu Ito
Toshio Takamatsu