Title:
NONVOLATILE STORAGE ELEMENT
Document Type and Number:
Japanese Patent JP3270765
Kind Code:
B2
Abstract:
PURPOSE: To remarkably reduce the area of a memory cell and to read nondestructively by providing a ferroelectric substance film accumulating electric charge in four field-effect transistors of a flip-flop circuit storing information.
CONSTITUTION: The flip-flop circuit 20 is constituted of four MFSFETs 24, 25, 26, 27 having a ferroelectric substance gate film 23 and a pair of FETs 21, 22 for write and read are connected to the flip-flop circuit 20 respectively. Then, a control circuit controlling connection between usual flip-flop circuit and a ferroelectric substance capacitor is unnecessiated and then the area of the memory cell is reduced remarkably. Further, since a channel forming state is held with the residual polarization of the ferroelectric substance film 23 by the MFDFETs 24, 25, 26, 27, a state immediately before power source is turned off is held by the flip-flop circuit 20 even when power source is turned off and nondestructive reading is performed.
Inventors:
Hidemi Takasu
Application Number:
JP4579092A
Publication Date:
April 02, 2002
Filing Date:
March 03, 1992
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
G11C11/22; G11C14/00; G11C16/04; G11C17/00; (IPC1-7): G11C11/22
Domestic Patent References:
| JP166899A | ||||
| JP3108759A | ||||
| JP4256361A | ||||
| JP212696A | ||||
| JP4228191A | ||||
| JP4367120A |
Attorney, Agent or Firm:
Inaoka Kozo (1 person outside)