Title:
Optical power detector
Document Type and Number:
Japanese Patent JP5940657
Kind Code:
B2
Abstract:
A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; and a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b for exciting an electron and an injector region 4c for transporting the electron, the active region 4b being formed on the outermost surface on the one side of the injector region 4c in the quantum cascade structure.
Inventors:
Kazutoshi Nakajima
Minoru Arakaki
Toru Hirohata
Hiroyuki Yamashita
Wataru Akahori
Fujita Kajo
Kazunori Tanaka
Minoru Arakaki
Toru Hirohata
Hiroyuki Yamashita
Wataru Akahori
Fujita Kajo
Kazunori Tanaka
Application Number:
JP2014515598A
Publication Date:
June 29, 2016
Filing Date:
May 10, 2013
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/0264; G01J1/02
Domestic Patent References:
| JP2012083238A | ||||
| JP2005159002A |
Other References:
G. Ariyawansa 他,"Bias-selectable tricolor tunneling quantum dot infrared photodetector for atmospheric windows",Applied Physics Letters,2008年 3月19日,Vol.92,p.111104-1~3
Shin-Yen Lin, Yau-Ren Tsai, and Si-Chen Lee,"High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer",Applied Physics Letters,2001年 2月16日,Vol.78, No.18,p.2784-2786
S. C. Lee, S.Krishna, and S. R. Brueck,Quantum dot infraredphotodetector enhanced by surface plasma wave excitation",OPTICS EXPRESS,2009年12月 2日,Vol.17, No.25,p.23160-23168
Chi-Yang Chang 他,"Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays",Applied Physics Letters,2007年10月17日,Vol.91,p.163107-1~3
Wei Wu, Alireza Bonakdar and Hooman Mohseni,"Plasmonic enhancedquantum well infrared photodetector with high detectivity",Applied Physics Letters,2010年 4月22日,Vol.96,p.161107-1~3
Shin-Yen Lin, Yau-Ren Tsai, and Si-Chen Lee,"High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer",Applied Physics Letters,2001年 2月16日,Vol.78, No.18,p.2784-2786
S. C. Lee, S.Krishna, and S. R. Brueck,Quantum dot infraredphotodetector enhanced by surface plasma wave excitation",OPTICS EXPRESS,2009年12月 2日,Vol.17, No.25,p.23160-23168
Chi-Yang Chang 他,"Wavelength selective quantum dot infrared photodetector with periodic metal hole arrays",Applied Physics Letters,2007年10月17日,Vol.91,p.163107-1~3
Wei Wu, Alireza Bonakdar and Hooman Mohseni,"Plasmonic enhancedquantum well infrared photodetector with high detectivity",Applied Physics Letters,2010年 4月22日,Vol.96,p.161107-1~3
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Naoshi Fukuyama
Hiroshi Abe
Hiroto Kido
Yoshiki Kuroki
Kenichi Shibayama
Naoshi Fukuyama
Hiroshi Abe
Hiroto Kido