Title:
OPTICAL SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3455575
Kind Code:
B2
Abstract:
PURPOSE: To provide an optical semiconductor device which is free from the problem of heat generation necessary for realizing an ultra-high-speed operation.
CONSTITUTION: This optical semiconductor device has a quantum well structure which is formed on an InP substrate 11 and consists of an InGaAlAs buffer layer 12, an AlAs barrier layer 13, an InAs well later 14 and an InGaAs well layer 15 and a pulse light incident means which makes pulse light of a pulse area of 2πm (n is a natural number) incident on this quantum well structure. The quantum well structure has a first sub-band SB 1 at which electrons exist in a conduction band before incidence of the pulse light and a second sub-band SB 2 which is higher in energy level than this first sub-band SB 1 and is in the state of permitting inter-sub-band transition of the electrons of the first sub-band SB 1.
Inventors:
Yuzo Hirayama
Application Number:
JP4236794A
Publication Date:
October 14, 2003
Filing Date:
March 14, 1994
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
G02F1/35; G02F1/015; G02F1/025; H01L27/15; H01L29/06; H01L29/68; H01L31/14; (IPC1-7): G02F1/35; H01L27/15; H01L29/06; H01L29/68; H01L31/14
Other References:
Ｄ．Ｊ．Ｎｅｗｓｏｎ ｅｔ．ａｌ，Ｐｏｓｓｉｂｉｌｉｔｙ ｏｆ ｏｐｔｉｃａｌ ｂｉｓｔａｂｌｉｔｙ ｄｕｅ ｔｏ ｒｅｓｏｎａｎｔ ｉｎｔｅｒｓｕｂｂａｎｄ ｅｘｃｉｔａｔｉｏｎ ｉｎ ｓｔｅｐｐｅｄ ｍｏｄｕｌａｔｉｏｎ−，Ａｐｐｌ．Ｐｈｙｓ．Ｌｅｔｔ，１９８７年１１月，５１（２３），ｐ１６７０−１６７２
Attorney, Agent or Firm:
Takehiko Suzue