Title:
MATERIAL FOR FORMING ORGANIC FILM, SUBSTRATE FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND FOR FORMING ORGANIC FILM
Document Type and Number:
Japanese Patent JP2022124133
Kind Code:
A
Abstract:
To provide a compound that is cured even in an inert gas and can form an organic underlayer film having excellent heat resistance, planarizing properties, and coatability and adhesion on a substrate; and a material for forming an organic film.SOLUTION: A material for forming an organic film contains: (A) a compound for forming an organic film, represented by the following formula (1A); and (B) an organic solvent, where W1 represents a tetravalent or hexavalent organic group, and each R1 independently represents a group represented by the following formula (1B). A hydrogen atom of a benzene ring in the formula is optionally substituted with a fluorine atom.SELECTED DRAWING: Figure 1
Inventors:
KOORI DAISUKE
SAWAMURA TAKASHI
SAWAMURA TAKASHI
Application Number:
JP2021021724A
Publication Date:
August 25, 2022
Filing Date:
February 15, 2021
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C08F38/00; G03F7/11; H01L21/027
Domestic Patent References:
| JP2022060680A | 2022-04-15 | |||
| JP2017021329A | 2017-01-26 | |||
| JP2017119670A | 2017-07-06 | |||
| JP2018013768A | 2018-01-25 | |||
| JP2016206676A | 2016-12-08 | |||
| JP2002356551A | 2002-12-13 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi