Title:
ORGANOMETAL COMPLEX AND METHOD FOR DEPOSITING METAL SILICATE THIN LAYER USING THE SAME
Document Type and Number:
Japanese Patent JP2003335791
Kind Code:
A
Abstract:
To provide an organometal complex and a method for depositing a metal silicate thin layer using the complex.
The metal silicate thin layer having a desired composition and useful as a gate insulation layer for a semiconductor element is easily producible by contacting a substrate with a vapor of an organometal complex of formula (1); (X)a-b-M-(Y-(Si(R)3)m)b (M is a trivalent or tetravalent metal; R is a 1-4C alkyl; X is a halogen or an alkyl; Y is O or N; (a) is 3 and (b) is an integer of 1-3 when M is a trivalent metal, or (a) is 4 and (b) is an integer of 1-4 when M is tetravalent metal; and (m) is 1 when Y is O, or (m) is 2 when Y is N).
Inventors:
RHEE SHI-WOO
KANG SANG-WOO
NAM WON-HEE
KANG SANG-WOO
NAM WON-HEE
Application Number:
JP2003121916A
Publication Date:
November 28, 2003
Filing Date:
April 25, 2003
Export Citation:
Assignee:
POHANG ENG COLLEGE
International Classes:
C07F7/00; C07F7/12; C07F19/00; C23C16/18; C23C16/40; C23C16/455; H01L21/314; H01L21/316; C23C16/44; (IPC1-7): C07F19/00; C23C16/18; H01L21/316
Attorney, Agent or Firm:
Takehiko Suzue (4 outside)