Title:
OXIDE FILM FORMING METHOD
Document Type and Number:
Japanese Patent JPH0786524
Kind Code:
A
Abstract:
PURPOSE: To form oxide films having different thicknesses on one substrate simultaneously without producing water marks.
CONSTITUTION: First and second regions 11A and 11B are provided on one substrate. Only an initial oxide film 12A formed on the first region 11A is subjected to dry-etching selectively to thin the film. Then an oxide film having a required thickness is formed over the first and second regions 11A and 11B again to form oxide films 14A and 14B having different thickness. With this constitution, the silicon surface which is a foundation is not exposed at all in the film forming process and water marks are not produced on the silicon surface.
More Like This:
Inventors:
NIMATA HIROYUKI
Application Number:
JP18900993A
Publication Date:
March 31, 1995
Filing Date:
June 30, 1993
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/316; H01L27/088; (IPC1-7): H01L27/088; H01L21/316
Attorney, Agent or Firm:
Kei Tanabe
Next Patent: 診断回路