Title:
OXIDE SEMICONDUCTOR FILM FORMATION METHOD AND THIN FILM TRANSISTOR MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2022097013
Kind Code:
A
Abstract:
To provide a film forming method capable of producing oxide semiconductor films having different crystallinity without significantly changing the film density.SOLUTION: In a method of forming an oxide semiconductor film on a substrate by sputtering a target using plasma, the crystallinity of the oxide semiconductor film is controlled by changing a distance between the substrate and the target. In the method of forming the film, it is preferable to perform sputtering using mixed gas of argon gas and oxygen gas as sputtering gas. Therefore, the sputtering gas contains oxygen gas, such that oxygen deficiency in the oxide semiconductor film can be further reduced and the film density can be improved.SELECTED DRAWING: Figure 6
Inventors:
MATSUO DAISUKE
Application Number:
JP2020210353A
Publication Date:
June 30, 2022
Filing Date:
December 18, 2020
Export Citation:
Assignee:
NISSIN ELECTRIC CO LTD
International Classes:
H01L21/203; C23C14/08; C23C14/34; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Nishimura Ryuhei
Shindai Saito
Yoshinaga Uemura
Nakamura Atsushi
Haruko Maeda
Shindai Saito
Yoshinaga Uemura
Nakamura Atsushi
Haruko Maeda