PURPOSE: To provide the production method of an oxide thin film laminate having multilayered structure which enables the formation of the high pressure-stable phase of the oxide thin film laminate under a nearly atmospheric pressure that is difficult to perform with the conventional methods through making clear the problems on the formation of the high pressure-stable phase and also to provide the oxide thin film laminate produced by this production method.
CONSTITUTION: The oxide thin film laminate having multilayered structure is produced by sequentially laminating oxide thin films having the mutually same or analogous crystal structure and mutually different compositions from each other from the atmospheric pressure-stable phase thin film 2 up to the high pressure-stable phase thin film 3 while cyclically changing the compositions of these thin films. This production method includes a stage for depositing the atmospheric pressure-stable phase thin film 2 by the epitaxial growth using raw materials that can provide both compositions of the atmospheric pressure-stable phase thin film 2 and the high pressure-stable phase thin film 3, and another stage for depositing plural thin films, which have the same or analogous crystal structure mutually same as or analogous to the atmospheric pressure-stable phase thin film 2 and mutually different compositions from each other, up to the high pressure-stable phase thin film 3 by the epitaxial growth while cyclically changing the compositions of the thin films. Thus, this production has the advantage of enabling the synthesis of the high pressure-stable compound under a nearly atmospheric pressure that is difficult to perform by positively using the epitaxial growth for forming the thin films.
| WO/2019/040746 | CRYSTALLINE TRANSITION METAL TUNGSTATE |
| JPS645965 | PRODUCTION OF SUPERCONDUCTOR |
ASANO HIDEFUMI
KARIMOTO SHINICHI
SUZUKI MINORU
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