Title:
ポストエッチング残渣を除去するための酸化性水性洗浄剤
Document Type and Number:
Japanese Patent JP2009512194
Kind Code:
A
Abstract:
An oxidizing aqueous cleaning composition and process for cleaning post-plasma etch residue and/or hardmask material from a microelectronic device having said residue thereon. The oxidizing aqueous cleaning composition includes at least one oxidizing agent, at least one oxidizing agent stabilizer comprising an amine species selected from the group consisting of primary amines, secondary amines, tertiary amines and amine-N-oxides, optionally at least one co-solvent, optionally at least one metal-chelating agent, optionally at least one buffering species, and water. The composition achieves highly efficacious cleaning of the residue material from the microelectronic device while simultaneously not damaging the interlevel dielectric and metal interconnect material also present thereon.
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Inventors:
Minsek, David, W.
Kolsensky, Michael Bee.
Rajaratnam, Martha
King, mackenzie
Ongust, david
Kolsensky, Michael Bee.
Rajaratnam, Martha
King, mackenzie
Ongust, david
Application Number:
JP2008534676A
Publication Date:
March 19, 2009
Filing Date:
October 04, 2006
Export Citation:
Assignee:
Advanced Technology Materials, Inc.
International Classes:
H01L21/304; B08B3/08; C11D7/18; C11D7/26; C11D7/32; C11D7/50; C11D17/08; C23G5/02; C23G5/024; C23G5/032; C23G5/036
Attorney, Agent or Firm:
Yoshiyuki Inaba
Shinji Oga
Toshifumi Onuki
Shinji Oga
Toshifumi Onuki