Title:
【発明の名称】位相シフトマスクの修正方法
Document Type and Number:
Japanese Patent JP2634289
Kind Code:
B2
Abstract:
A mask repair method in which a transparent defect of in a phase shifter pattern is repaired by ion beam etching instead of a shifter pattern film deposition. A portion of the mask substrate below the transparent defect region is etched with an ion beam to a depth such that the phase of light passing through the adjacent transparent pattern regions and the phase of light passing through the etched region are opposite to each other. This mask repairing method enables high-contrast exposure and ensures high working accuracy since the repairing process is based on etching alone.
More Like This:
Inventors:
HOSONO KUNIHIRO
Application Number:
JP10035790A
Publication Date:
July 23, 1997
Filing Date:
April 18, 1990
Export Citation:
Assignee:
MITSUBISHI DENKI KK
International Classes:
G03F1/30; G03F1/72; G03F1/74; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Domestic Patent References:
| JP3196041A |
Attorney, Agent or Firm:
Mitsuteru Soga (4 outside)