Title:
【発明の名称】フィールド分離絶縁膜の製造方法
Document Type and Number:
Japanese Patent JP2886183
Kind Code:
B2
Abstract:
A LOCOS isolation film is formed on a major surface of a semiconductor substrate. Thereafter, a new surface of the semiconductor substrate is exposed by wet etching. A resist pattern is formed on the exposed new surface. A part of the LOCOS isolation film is removed using this resist pattern, to expose the surface of the semiconductor substrate. This unsymmetrical LOCOS isolation film increases the effective area of the surface of the semiconductor substrate and preserves predetermined dielectric resistance.
Inventors:
Tomoya
Ritsuko Tsutsumi
Arimoto Ichiro
Masami Yamamoto
Ritsuko Tsutsumi
Arimoto Ichiro
Masami Yamamoto
Application Number:
JP16234289A
Publication Date:
April 26, 1999
Filing Date:
June 22, 1989
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/76; H01L21/027; H01L21/316; H01L21/762; H01L21/822; H01L21/8242; H01L27/04; H01L27/10; H01L27/108; (IPC1-7): H01L21/316; H01L21/027; H01L21/76; H01L21/822; H01L21/8242; H01L27/04; H01L27/108
Domestic Patent References:
| JP58153363A | ||||
| JP6379371A | ||||
| JP62296438A | ||||
| JP60128635A |
Attorney, Agent or Firm:
Fukami Hisaro (3 outside)