【発明の名称】半導体装置においてポリシリコンゲートとポリシリコンエミッタとを同時に形成する方法

Title:

【発明の名称】半導体装置においてポリシリコンゲートとポリシリコンエミッタとを同時に形成する方法

Document Type and Number:

Japanese Patent JP2895845

Kind Code:

B2

Inventors:

MAIKERU PII BURATSUSHINGUTON
REDA AARU RAZUUKU
MONIIRU EICHI ERUUDAIWANII
PURATEIIPU TANTASUUDO

Application Number:

JP873489A

Publication Date:

May 24, 1999

Filing Date:

January 19, 1989

Export Citation:

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Assignee:

NASHONARU SEMIKONDAKUTAA CORP

International Classes:

H01L29/73; H01L21/28; H01L21/311; H01L21/331; H01L21/336; H01L21/8222; H01L21/8248; H01L21/8249; H01L27/06; H01L29/732; H01L29/78; (IPC1-7): H01L21/8249; H01L27/06

Domestic Patent References:

JP6072255A
JP6298663A
JP62239563A

Attorney, Agent or Firm:

Kazuo Kobashi (1 person outside)

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