PURPOSE: To provide a highly reliable miniature light receiving device having uniform characteristics and a fabrication method thereof.
CONSTITUTION: An oxide layer 11 of SiO2, phosphorus silicate, Al2O3, borosilicate glass, etc., is formed at least partially on a semiconductor of InP 1, for example. A metal layer 12 of Ti-Pt-Au, for example, is then formed thereon and a part thereof is employed as a region being bonded to a wiring board. The metal layer 12 formed on the oxide layer 11 may come into contact with a part 14 of the semiconductor 1 and spread to serve as an ohmic electrode. Preferably, the metal layer 3 in the region 3 comprising a laminate of the semiconductor/the oxide layer/the metal layer has substantially same height as an electrode 9 in an opposite conductivity type region 8. Since the bonding strength between the body part and the wiring board is enhanced, a highly reliable miniature device having uniform characteristics can be fabricated.
KANEKO TADAO
YAMAMOTO EIJI
MITANI KATSUHIKO
