PURPOSE: To prevent the increase of leakage currents at a time when a semiconductor element is left as it is under the atmosphere of wet beat, and to improve reliability by using a specific polyamide acid and the mixture of a tertiary amine compound and a specific silanol compound and/or a partial condensate thereof as varnish.
CONSTITUTION: In a passivation method in which the exposed surface of a P-N junction in a semiconductor element is coated with polyimide group varnish and heated and treated, a polyamido acid having a structural unit shown in formula [I] and the mixture of a tertiary amido compound and an silanol compound shown in formula [II] and/or a partial condensate thereof are employed as varnish. Rl represents a trivalent or tetravalent organic group, R2 a bivalent organic group, m1 or 2, (R3) a monovalent organic group and n 1, 2, 3 in formulae. A compound capable of being changed into a polymer having an imido ring and other ring structure by heating or a proper catalyst is employed as the polyamido acid.
| JP2011082564 | OLED HAVING NON-HOLE BLOCKING BUFFER LAYER |
| JP2000208630 | PRODUCTION OF INTEGRATED CIRCUIT |
HIRAMOTO YOSHI
MANABE SHINICHI
| JPS6066437A | 1985-04-16 |