PURPOSE: To form negative resist patterns of a high resolution by using an i-ray reduction stepper and to decrease the effect of standing waves.
CONSTITUTION: A resist coating film consisting of an m,p-cresol novolak resin, 3,3'-dimethoxy-4,4'-diazide biphenyl, and naphthoquinone diazide sulfonate is exposed with patterns by light, such as i-ray (365nm) shorter in wavelength than 366nm and is then subjected to full-surface exposing by light, such as g-ray (436nm) of the wavelength longer than 400nm then to a baking treatment. The difference in the dissolution rate between the part exposed with the i-ray and the unexposed part increases to the difference larger than a resist which does not contain the naphthoquinone diazide sulfonate. The patterns of a high resolution are thus formed by using the reduction stepper of the short wavelength light, such as the i-ray.
UENO TAKUMI
MORIUCHI NOBORU
SHIRAI SEIICHIRO
ONOZUKA TOSHIHIKO
HATTORI KOJI
UCHINO MASAICHI
HITACHI CHEMICAL CO LTD
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