Title:
PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JPH01118126
Kind Code:
A
Abstract:
PURPOSE:To prevent the charge up of a lower resist, and to enable the processing of a resist pattern at a low temp. by using a specified aromatic vinyl compd. for the lower layer resist in a multi-layer resist process applying an electron beam lithography. CONSTITUTION:In the method for forming a resist pattern according to the multi-layer resist process applying the electron beam lithography, the aromatic vinyl compd. which is partially substd. for a molecule contg. a chlorine atom having >=50% chlorine substituting ratio, and has <=13,000mol.wt., is used for the lower layer resist. Said partially chlorinated aromatic vinyl compd. is used, for example, by applying on the substrate and heating to form the lower layer resist insoluble to a layer which is to be formed thereon. Thus, the charging up of the lower layer resist is prevented, and the processing of the resist pattern at the low temp. is permitted.
Inventors:
OSHIO SHUZO
KOBAYASHI KOICHI
KOBAYASHI KOICHI
Application Number:
JP27466987A
Publication Date:
May 10, 1989
Filing Date:
October 31, 1987
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G03F7/11; G03F7/09; G03F7/095; H01L21/027; (IPC1-7): G03C1/00; G03F7/00; H01L21/30
Attorney, Agent or Firm:
Aoki Akira (3 outside)
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