Title:
パターン形成用基材、ネガ型レジスト組成物、パターン形成方法、および半導体装置
Document Type and Number:
Japanese Patent JP4245172
Kind Code:
B2
Abstract:
With the tendency of reducing the size of semiconductor circuit patterns, edge roughness on a resist pattern is increased when pattern dimensions required are close to the size of the resist molecules. Provided is a technique for preventing degradation of the device performance and negative effects over the system performance caused by the phenomena. A photoresist compound is used, which is a molecule having functional groups that are chemically converted due to an action of an acid with reduced solubility in alkaline developer.
Inventors:
Kyoko Kojima
Koji Hattori
Koji Hattori
Application Number:
JP2005348781A
Publication Date:
March 25, 2009
Filing Date:
December 02, 2005
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
G03F7/004; C07C39/15; C07C39/17; G03F7/038; H01L21/027
Domestic Patent References:
| JP2004191913A | ||||
| JP2005326838A | ||||
| JP11153863A | ||||
| JP10310545A | ||||
| JP2002258480A | ||||
| JP2001255655A | ||||
| JP2002016151A |
Foreign References:
| WO2004012012A1 |
Attorney, Agent or Firm:
Polaire Patent Business Corporation