To obtain a pattern verification-inspection method by which a pattern dimension of a mask pattern is inspected with high accuracy.

The pattern verification-inspection method for inspecting a pattern dimension of a mask pattern formed in a photomask includes: an illumination condition deriving step of deriving illumination conditions at the position of an inspection object based on the position of the inspection object that is the position of a mask pattern as an inspection object within the photomask plane and based on the distribution of illumination conditions within the photomask plane of the exposure light irradiating the photomask by an exposure apparatus; a simulation step of carrying out lithographic simulation of the mask pattern at each position of the inspection object based on the illumination conditions at the position of the inspection object and the pattern contour of the mask pattern; and a verification-inspection step of inspecting the pattern dimension based on the result of the lithography simulation.