Title:
PATTERNING METHOD OF POSITIVE RESIST
Document Type and Number:
Japanese Patent JPS5984426
Kind Code:
A
Abstract:
PURPOSE:To obtain a pattern having steep cut surface by treating a surface of a resist film with strongly alkaline solution in advance of exposure in process of patterning on a resist film by forming the resist film composed of novolak- group resin containing o-naphthoquinonediazide group as photosensitive radical on a material to be etched, followed by the exposure and development. CONSTITUTION:When a compound containing o-naphthoquinonediazide group is treated with strongly alkaline solution such a KOH, NaOH or developing solution, condensation shown in the figure occurs to generate azo-compound. Accordingly, if the resist surface is bathed in strongly alkaline solution in advance of exposure, azo-compound is generated in a compound containing o-naphthoquinonediazide group as the surface, and further it is diffused in the resist so that concentration of molecules relating to photosensitivity becomes lower in adjacency of the surface. The result condition is illustrated in the figure where a borderline of non-photosensitive region 1 and photosensitive region 2 of the resist film formed on a substrate 3 is nearly vertical and wall of the left region 2 becomes steep.
Inventors:
MORIYAMA ICHIROU
Application Number:
JP19387582A
Publication Date:
May 16, 1984
Filing Date:
November 04, 1982
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
G03F7/38; G03F7/16; G03F7/20; H01L21/027; (IPC1-7): G03F7/20
Attorney, Agent or Firm:
Uchihara Shin
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