Title:
Phase change thin film vapor growth method
Document Type and Number:
Japanese Patent JP6259073
Kind Code:
B2
Abstract:
In order to form a phase change thin film being flat in a nanometer level and having a good coverage, which is essential for realizing a three-dimensional ultra-high integrated phase change memory, an equipment for vapor phase growth of a phase change thin film is provided which form a phase change thin film at low temperature while the film is being kept in a completely amorphous state. A structure is provided in which an ammonia cracker is connected to a reactor of the equipment for vapor phase growth for a nitrogen radical obtained by decomposing ammonia gas. Consequently, low temperature decomposition of metal organic precursor and film formation on a substrate surface are realized. With the use of this equipment, it is possible to realize a completely amorphous film which has a flat surface at a low temperature of 135° C. using an amine complex as a Ge precursor.
Inventors:
Yoshihisa Fujisaki
Yoshitaka Sasako
Takashi Kobayashi
Yoshitaka Sasako
Takashi Kobayashi
Application Number:
JP2016509840A
Publication Date:
January 10, 2018
Filing Date:
March 28, 2014
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L21/365; C23C16/18; C23C16/30; C23C16/452; H01L21/8239; H01L27/105; H01L45/00
Domestic Patent References:
| JP2008311664A | ||||
| JP2010059546A | ||||
| JP2007066472A1 | ||||
| JP2012514635A | ||||
| JP2009133003A | ||||
| JP2011071380A |
Attorney, Agent or Firm:
Aoritsu patent business corporation