位相反転ブランクマスク及びフォトマスク

Title:

位相反転ブランクマスク及びフォトマスク

Document Type and Number:

Japanese Patent JP6666951

Kind Code:

B2

Abstract:

Disclosed are a phase-shift blankmask and a phase-shift photomask, which includes a phase-shift film made of silicon (Si) or a silicon (Si) compound on a transparent substrate and has a high transmittance characteristic. In the phase-shift blankmask according to the present disclosure, the phase-shift film has a high transmittance of 50% or higher, thereby achieving a micro pattern smaller than or equal to 32 nm, preferably 14 nm, and more preferably 10 nm for a semiconductor device, for example, a DRAM, a flash memory, a logic device.

Inventors:

Nam, Keys
Shin, Chul
Lee, Jung-Hwa
Yang, Chul-Gyu
Kim, Chang-Jun
Shin, Sun-Hyeop
Gong Woo

Application Number:

JP2018091383A

Publication Date:

March 18, 2020

Filing Date:

May 10, 2018

Export Citation:

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