Title:
PHOTODETECTOR HAVING QUANTUM WAVE INTERFERENCE LAYER
Document Type and Number:
Japanese Patent JP3544160
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To increase a photodetection sensitivity and a respond speed by a pin junction, wherein the thickness of a quantum wave interference layer and a carrier confinement layer are specified.
SOLUTION: In an (i) layer of a pin junction, quantum wave interference layers Q1-Q4, made by stacking a first layer W and a second layer B having a broader band width than the first layer W at a multiple cycle and carrier confinement layers C1-C3, are formed. The thicknesses of the first layer W and the second layer B are set at even-number times as large as one fourth that of the wavelength of the quantum wave of a carrier in each layer. In a boundary between the first layer W and the second layer B, a layer is formed which is sufficiently thinner than the first layer W and the second layer B and which causes rapid changes in an energy band. Due to this structure, when electrons are excited by light in the carrier confinement layers C1-C3, the quantum wave interference layers are propagated by waves from an (n) layer to a (p) layer, to allow a photoelectric current to flow at high speeds.
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Inventors:
Hiroyuki Kano
Application Number:
JP35997499A
Publication Date:
July 21, 2004
Filing Date:
December 17, 1999
Export Citation:
Assignee:
Canare Electric Co., Ltd.
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Domestic Patent References:
| JP10303438A | ||||
| JP4355976A | ||||
| JP4252081A | ||||
| JP1302777A | ||||
| JP6334265A | ||||
| JP10303435A | ||||
| JP7254753A | ||||
| JP6237040A | ||||
| JP5275717A | ||||
| JP11251680A |
Attorney, Agent or Firm:
Osamu Fujitani