Title:
光検出器
Document Type and Number:
Japanese Patent JP7034016
Kind Code:
B2
Abstract:
To provide a photodetector capable of preventing a short circuit between metal electrode layers and facilitating a manufacturing process and improving a manufacturing yield.SOLUTION: A photodetector 1A includes a metal layer 3 provided on one surface 2a of a semiconductor layer 2, and a first metal electrode layer 5 and a second metal electrode layer 6 provided separately on the other surface 2b of the semiconductor layer 2, and the junction direction B of a first MIM resonator 11A and a second MIM resonator 11B intersects with the direction A of the pn junction in the semiconductor layer 2, and the resonator length L of the first MIM resonator 11A and the second MIM resonator 11B is the length by which surface plasmons are excited by incident light I having a wavelength longer than the absorption edge wavelength of the semiconductor layer 2 and phonons are excited by an electric field formed by resonance of the surface plasmons.SELECTED DRAWING: Figure 1
Inventors:
Toru Hirohata
Hiroyasu Fujiwara
Hiroyasu Fujiwara
Application Number:
JP2018120057A
Publication Date:
March 11, 2022
Filing Date:
June 25, 2018
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/10; G01J1/02
Domestic Patent References:
| JP2014007334A | ||||
| JP10509806A | ||||
| JP2007273832A |
Foreign References:
| US20070257328 | ||||
| WO2010021073A1 | ||||
| US8466528 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Hiromitsu Nakayama
Yoshiki Kuroki
Kenichi Shibayama
Hiromitsu Nakayama