Title:
光電変換素子
Document Type and Number:
Japanese Patent JP4186725
Kind Code:
B2
Abstract:
A photovoltaic converter, maintaining the function of a protective film, simultaneously reducing the reflection loss and carrier recombination loss, and raising the power generation efficiency, formed on a semiconductor substrate and provided on its light receiving surface with a silicon nitride film as a protective film/antireflection film, wherein a content of hydrogen or a halogen is increased and a ratio of Si content/N content is increased at a boundary region of the silicon nitride film with the semiconductor substrate compared with other portions so as to maintain a refractive index at the boundary region equal to the other portions.
Inventors:
Nagashima
Kawaguchi Kazuyoshi
Kawaguchi Kazuyoshi
Application Number:
JP2003180029A
Publication Date:
November 26, 2008
Filing Date:
June 24, 2003
Export Citation:
Assignee:
TOYOTA JIDOSHA KABUSHIKI KAISHA
International Classes:
H01L31/04; H01L25/00; H01L31/00; H02N6/00
Domestic Patent References:
| JP2002270879A | ||||
| JP2002284616A | ||||
| JP2002277605A |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Hiroshi Kamematsu
Nagasaka Tomoyasu
Takashi Ishida
Tetsuji Koga
Hiroshi Kamematsu
Nagasaka Tomoyasu