Title:
PHOTOELECTRIC INTEGRATION DEVICE FOR RECEPTION AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP2580451
Kind Code:
B2
Abstract:
PURPOSE: To provide a photoelectric integration device for reception and its manufacture by which reception sensitivity, high-speed operation and reliability can be improved, packaging process can be simplified and the manufacturing cost can be reduced.
CONSTITUTION: A photoelectric integration device comprises a photosensor and a transistor formed on a substrate. The photosensor comprises an n-type channel layer (n-InGaAs), an etching-blocking layer (u-Inp), and an absorbing layer (u-InGaAs) which are formed as mesa-types on a part of a semi-insulating substrate (S, I-INP) which is etched up to a specified depth. A transistor comprises an n-type channel layer (n-InGaAs), an etching-blocking layer (u-Inp), and a p-type InP layer which are formed as reverse mesa-type on a part of the semi-insulating substrate which is not etched.
Inventors:
GO MITSUTATSU
RI JUTAKU
RI JUTAKU
Application Number:
JP31476492A
Publication Date:
February 12, 1997
Filing Date:
November 25, 1992
Export Citation:
Assignee:
KANKOKU DENSHI TSUSHIN KENKYUSHO
International Classes:
H01L27/14; H01L21/8252; H01L27/095; H01L27/144; H01L31/10; H01L31/105; H01L31/18; (IPC1-7): H01L27/095; H01L27/14; H01L31/10
Domestic Patent References:
| JP2283067A | ||||
| JP5197369A | ||||
| JP6178174A | ||||
| JP276223A |
Attorney, Agent or Firm:
Kazuko Tomita (1 outside)
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