Title:
PHOTOELECTRIC SURFACE
Document Type and Number:
Japanese Patent JP3565534
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a photoelectric surface made of a semiconductor, the surface of which forming a surface layer made of polarized material having a larger value of an energy band gap than that of semiconductor and a smaller value of an electron affinity than that of semiconductor, to lessen chemical activity of the surface layer and to stabilize prescribed characteristics by reducing or negatively setting the value of the electron affinity on the surface of the semiconductor.
SOLUTION: A polarized material is composed of at least one kind of components selected from a group consisting of CsI, RbI, KI, NaI, CsBr, KBr, CsCl, RbCl, KCl, RbF and KF. The thickness of the surface layer made of polarized material is not more than 10nm. It is preferable that a value of an energy band gap corresponding to a wavelength in the ultraviolet radiation range. This improves sensitivity of a photoelectric surface, and does not deteriorate quality of the photoelectric surface because the polarized material is stable.
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Inventors:
Minoru Hagino
Tokuaki Futahashi
Tokuaki Futahashi
Application Number:
JP34839496A
Publication Date:
September 15, 2004
Filing Date:
December 26, 1996
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01J1/34; (IPC1-7): H01J1/34
Domestic Patent References:
| JP6342625A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Kazuo Yoshii
Tatsuya Shioda
Shiro Terasaki
Kazuo Yoshii