Title:
PHOTOMASK, METHOD FOR MANUFACTURING THE SAME, AND PATTERN TRANSFER METHOD
Document Type and Number:
Japanese Patent JP2007114536
Kind Code:
A
Abstract:
To provide a photomask that can decrease changes in a polarization state of exposure light induced by the mask itself and transfer a preferable fine image onto a wafer in photolithography with a 45 nm half pitch node or further advanced techniques, and to provide a method for easily manufacturing the mask and a pattern forming method using the photomask.
The photomask has a mask pattern on one principal face of a transparent substrate, wherein the principal face including the mask pattern is covered with a thin film layer having a refractive index higher than that of air and high refractive index for exposure light.
Inventors:
ADACHI TAKASHI
INAZUKI YUICHI
SUDO TAKANORI
MORIKAWA YASUTAKA
SHIMADA SHU
YOSHIDA YUICHI
FURUYAMA NATSUMI
SASAKI SHIHO
MESHIDA TAKASHI
TOYAMA NOBUTO
MORI HIROSHI
INAZUKI YUICHI
SUDO TAKANORI
MORIKAWA YASUTAKA
SHIMADA SHU
YOSHIDA YUICHI
FURUYAMA NATSUMI
SASAKI SHIHO
MESHIDA TAKASHI
TOYAMA NOBUTO
MORI HIROSHI
Application Number:
JP2005306531A
Publication Date:
May 10, 2007
Filing Date:
October 21, 2005
Export Citation:
Assignee:
DAINIPPON PRINTING CO LTD
International Classes:
G03F1/30; G03F1/32; G03F1/34; G03F1/48; G03F7/20; H01L21/027
Attorney, Agent or Firm:
Satoshi Kanayama