To minimize a mixed and integrated device or a wiring pattern and to obtain a large-scale and high-performance device by forming a second transparent region which inverts the phase of exposure light to the exposure light passing through a first transparent region and which acts as a light-shielding pattern on a wafer.

A transparent substrate exposed is partly etched to desired depth by using a resist pattern as a mask to produce a mask consisting of a light-shielding part 1 as a recessed pattern, first transparent part 2, second transparent part 3 which acts as a light-shielding pattern on a wafer, and light- shielding pattern 4 on the substrate. The depth of the recess is controlled so that the phase of the exposure light passing through the recessed pattern of the substrate is inverted from the phase of the exposure light passing through the periphery of the pattern. The mask has the combination of the pattern made of the light-shielding film and the pattern made of the recess of the substrate. In the pattern made of the recess, an isolated pattern is mainly formed, while in the pattern made of a light-shielding film, a densely arranged pattern is mainly formed.