PURPOSE: To provide a photomask which is constituted to prevent the occurrence of a notching phenomenon in a photosensitive film mask due to randomly reflected light from the tilted surface of a recess of a layer on which the pattern is to be formed during an exposing process in forming the photosensitive film pattern at the adjacent position of the recess.

CONSTITUTION: A photomask 30 is provided with a large number of dot patterns 5 which can reduce the intensity of the light made incident to the quartz substrate 6 of the mask 30 at a position which overlaps the recess 3 of a layer on which a pattern is to be formed and is adjacent to the area of a chromium pattern 4 and can prevent a photosensitive film pattern from being damaged due to the exposure of an unplanned part of the pattern to reflected light from the tilted surface of the recess 3. Therefore, the process yield of the photomask 30 can be increased, because the manufacturing process of the photomask 30 becomes simpler as compared with the conventional three-layer resist method, method using a low-reflectivity material, etc., and the reliability of the photomask 30 can be increased.