Title:
PHOTOSENSOR
Document Type and Number:
Japanese Patent JPS5717185
Kind Code:
A
Abstract:
PURPOSE:To enable high resolution and high-speed signal processing by a photoconductive layer in an amorphous material, which contains hydrogen or a halogen element and a parent substance thereof is silicon or germanium. CONSTITUTION:Each layer of the first doping layers 104 formed on picture element electrodes 102, a photoconductive layer 106 and the second doping layer 107 is constituted by the amorphous material, which contains at least one of hydrogen or the halogen element and the parent substance thereof is at least one of silicon or germanium, and a predetermined N type impurity is further doped to the two doping layers by a fixed quantity. Accordingly, an ohmic contact is ensured excellently by using an N type layer, to which P or/and As is doped, as an electrode at the light receiving surface side or as one part of the electrode because each layer is controlled in N types, and the photosensor having excellent characteristics is obtained.
Inventors:
KOMATSU TOSHIYUKI
YOSHIOKA SEISHIROU
FUKAYA MASAKI
UZAWA SHIYUNICHI
SHIRATO YOSHIAKI
YOSHIOKA SEISHIROU
FUKAYA MASAKI
UZAWA SHIYUNICHI
SHIRATO YOSHIAKI
Application Number:
JP9147380A
Publication Date:
January 28, 1982
Filing Date:
July 04, 1980
Export Citation:
Assignee:
CANON KK
International Classes:
H01L21/205; H01L27/144; H01L27/146; H04N5/335; H04N5/357; (IPC1-7): H01L21/205; H01L31/08; H04N5/30